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Si2335DS
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
0.051 at V GS = - 4.5 V
I D (A)
- 4.0
FEATURES
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFETs: 1.8 V Rated
- 12
0.070 at V GS = - 2.5 V
0.106 at V GS = - 1.8 V
G
S
- 3.5
- 3.0
1
2
TO-236
(SOT-23)
3
D
Top View
Si2335DS (E5)*
*Marking Code
Ordering Information: Si2335DS-T1-E3 (Lead (Pb)-free)
Si2335DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
- 12
±8
Unit
V
Continuous Drain Current (T J = 150 °C) a, b
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
- 4.0
- 3.3
- 15
- 3.2
- 2.6
A
Continuous Source Current (Diode Conduction) a, b
I S
- 1.6
Maximum Power Dissipation a, b
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
1.25
0.8
- 55 to 150
0.75
0.48
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
Steady State
R thJA
R thJF
75
120
40
100
166
50
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71314
S09-0130-Rev. B, 02-Feb-09
www.vishay.com
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